n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r ds(on) =2 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 450 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 500 100 na m a v ds =60 v, v gs =0 v ds =48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 2av ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2 w v gs =10v,i d =1a forward transconductance (1)(2) g fs 300 ms v ds =18v,i d =1a input capacitance (2) c iss 75 pf common source output capacitance (2) c oss 45 pf v ds =18 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf e-line to92 compatible ZVN2106A 3-361 d g s typical characteristics v ds - drain source voltage (volts) i d( o n ) -on-s t ate drain curren t (amps) 01 2 3 4 5 saturation characteristics 5v v gs= 10v 7v 8v 6v 4v 3v 0 02 46810 1.6 1.2 1.4 1.8 2.0 v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) i d= 1a 0.5a 0.25a 9v on-resistance v gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source on-resistance ( w ) 1234567891020 i d= 1a 0.5a 0.25a 0.1 1 10 normalised r ds(on) and v gs(th) vs temperature normalis e d r ds( o n) a n d v gs(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r es i s ta n c e r d s( o n ) g ate t h res h o l d v o l t ag e v gs( th ) t j -junction temperature (c) 0.4 -80 -60 0 4 3 1 2 0.6 0.2 0.4 0.8 1.0 transfer characteristics i d( o n ) -on-s t ate drain curren t (a m ps) v gs- gate source voltage (volts) 012345678910 v ds= 10v 2 0 4 3 1 i d= 1a v gs= 10v i d= 1ma v gs= v ds transconductance v drain current i d - drain current (amps ) g fs - t r an sc o nd ucta nce (s) 01 2 3 4 5 0.7 0.6 0.4 0.1 0 0.2 0.5 0.3 v ds= 10v ZVN2106A 3-362
n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r ds(on) =2 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 450 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 500 100 na m a v ds =60 v, v gs =0 v ds =48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 2av ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2 w v gs =10v,i d =1a forward transconductance (1)(2) g fs 300 ms v ds =18v,i d =1a input capacitance (2) c iss 75 pf common source output capacitance (2) c oss 45 pf v ds =18 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf e-line to92 compatible ZVN2106A 3-361 d g s typical characteristics v ds - drain source voltage (volts) i d( o n ) -on-s t ate drain curren t (amps) 01 2 3 4 5 saturation characteristics 5v v gs= 10v 7v 8v 6v 4v 3v 0 02 46810 1.6 1.2 1.4 1.8 2.0 v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) i d= 1a 0.5a 0.25a 9v on-resistance v gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source on-resistance ( w ) 1234567891020 i d= 1a 0.5a 0.25a 0.1 1 10 normalised r ds(on) and v gs(th) vs temperature normalis e d r ds( o n) a n d v gs(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rc e r es i s ta n c e r d s( o n ) g ate t h res h o l d v o l t ag e v gs( th ) t j -junction temperature (c) 0.4 -80 -60 0 4 3 1 2 0.6 0.2 0.4 0.8 1.0 transfer characteristics i d( o n ) -on-s t ate drain curren t (a m ps) v gs- gate source voltage (volts) 012345678910 v ds= 10v 2 0 4 3 1 i d= 1a v gs= 10v i d= 1ma v gs= v ds transconductance v drain current i d - drain current (amps ) g fs - t r an sc o nd ucta nce (s) 01 2 3 4 5 0.7 0.6 0.4 0.1 0 0.2 0.5 0.3 v ds= 10v ZVN2106A 3-362
typical characteristics g f s -t ransconductance (s) transconductance v gate-source voltage v gs -gate source voltage (volts) q-charge (nc) v gs - gate so ur ce v o l ta ge ( v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 3a 30v 50v 0.5 1.0 1.5 2.0 2.5 02 468 10 0.7 0.6 0.4 0.1 0 0.2 0.5 0.3 v ds= 10v v ds -drain source voltage (volts) capacitance v drain-source voltage c- ca pa c ita nce ( pf) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 3.0 ZVN2106A 3-363
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